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RAM Memory Kingston ValueRAM 8GB/ DDR4/ 3200MHz/ 1.2V/ CL22/ SODIMM / KVR32S22S6

Description

Kingston ValueRAM 8GB 3200MHz DDR4

This document describes the ValueRAM KVR32S22S6/8 as a 1G x 64-bit (8GB), 1Rx16 DDR4-3200 CL22 SDRAM (Synchronous DRAM) memory module based on four 1G x 16-bit FBGA components.

The SPD is programmed to the JEDEC DDR4-3200 standard latency of 22-22-22 at 1.2V. This 260-pin SODIMM uses gold contacts

Characteristics

  • VDDQ = 1.2 V typical
  • VPP = 2.5 V typical
  • VDDSPD = 2.2V to 3.6V
  • Nominal and dynamic on-chip termination (ODT) for data, strobe and mask signals
  • Low Power Self-Refresh (LPASR)
  • Data Bus Inversion (DBI) for data bus
  • On-chip VREFDQ generation and calibration
  • Single rank
  • Integrated I2 serial presence detect (SPD) EEPROM
  • 8 internal benches; 2 groups of 4 benches each
  • Fixed burst cutoff (BC) of 4 and burst length (BL) of 8 via mode register set (MRS)
  • BC4 or BL8 selectable on the fly (OTF)
  • Pass-through topology
  • Address bus and control command terminated
  • PCB: Height of 1.18” (30.00 mm)
  • RoHS compliant and halogen free

Specs

  • Capacity: 8 GB
  • Type: SDRAM-DDR4
  • Design: SO-DIMM
  • Connection: pin 260
  • Voltage: 1.2 volts
  • Standard: DDR4-3200
  • Physical clock: 3200 MHz
  • CAS Latency (CL): 22

RAM Memory Kingston ValueRAM 8GB/ DDR4/ 3200MHz/ 1.2V/ CL22/ SODIMM / KVR32S22S6

Product form
P/N: KVR32S22S6/8

SKU: KIN-8GB KVR32S22S6 8

21,76 € 18,50 € Incl. VAT

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    Specs

    Description

    Kingston ValueRAM 8GB 3200MHz DDR4

    This document describes the ValueRAM KVR32S22S6/8 as a 1G x 64-bit (8GB), 1Rx16 DDR4-3200 CL22 SDRAM (Synchronous DRAM) memory module based on four 1G x 16-bit FBGA components.

    The SPD is programmed to the JEDEC DDR4-3200 standard latency of 22-22-22 at 1.2V. This 260-pin SODIMM uses gold contacts

    Characteristics

    • VDDQ = 1.2 V typical
    • VPP = 2.5 V typical
    • VDDSPD = 2.2V to 3.6V
    • Nominal and dynamic on-chip termination (ODT) for data, strobe and mask signals
    • Low Power Self-Refresh (LPASR)
    • Data Bus Inversion (DBI) for data bus
    • On-chip VREFDQ generation and calibration
    • Single rank
    • Integrated I2 serial presence detect (SPD) EEPROM
    • 8 internal benches; 2 groups of 4 benches each
    • Fixed burst cutoff (BC) of 4 and burst length (BL) of 8 via mode register set (MRS)
    • BC4 or BL8 selectable on the fly (OTF)
    • Pass-through topology
    • Address bus and control command terminated
    • PCB: Height of 1.18” (30.00 mm)
    • RoHS compliant and halogen free

    Specs

    • Capacity: 8 GB
    • Type: SDRAM-DDR4
    • Design: SO-DIMM
    • Connection: pin 260
    • Voltage: 1.2 volts
    • Standard: DDR4-3200
    • Physical clock: 3200 MHz
    • CAS Latency (CL): 22

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